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PD - 9.1329B
IRLIZ34N
HEXFET(R) Power MOSFET
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.035 ID = 22A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
22 15 110 37 0.24 16 110 16 3.7 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Min.
---- ----
Typ.
---- ----
Max.
4.1 65
Units
C/W 8/25/97
IRLIZ34N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf LD LS Ciss Coss Crss C
Min. 55 --- --- --- --- 1.0 11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.065 --- --- --- --- --- --- --- --- --- --- --- --- 8.9 100 29 21
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.035 VGS = 10V, ID = 12A 0.046 VGS = 5.0V, ID = 12A 0.060 VGS = 4.0V, ID = 10A 2.0 V VDS = VGS, I D = 250A --- S VDS = 25V, ID = 16A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 25 ID = 16A 5.2 nC VDS = 44V 14 V GS = 5.0V, See Fig. 6 and 13 --- VDD = 28V --- ID = 16A ns --- RG = 6.5, VGS = 5.0V --- RD = 1.8, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH from package 7.5 --- and center of die contact 880 --- VGS = 0V 220 --- pF VDS = 25V 94 --- = 1.0MHz, See Fig. 5 12 --- = 1.0MHz Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 25C, IF = 16A di/dt = 100A/s
D
G
S
Source-Drain Ratings and Characteristics
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 76 190 22 A 110 1.3 110 290 V ns nC IS
ISM
D
G S
VSD t rr Q rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 610H RG = 25, IAS = 16A. (See Figure 12) ISD 16A, di/dt 270A/s, VDD V(BR)DSS, TJ 175C
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRLZ34N data and test conditions
IRLIZ34N
10000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.0V TOP
10000
I D , D ra in -to -S o u rc e C u rre n t (A )
ID , D ra in -to -S o u rc e C u rre n t (A )
1000
1000
100
100
VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V TOP
10
10
1
1
2 .0V
0.1
0.1
0.01
2.0 V 2 0 s PU LS E W ID TH T J = 2 5C A
0.1 1 10 100
0.01
0.001
0.001 0.1 1
2 0 s PU L SE W ID TH T J = 1 75 C
10
100
A
V D S , Drain-to-Source V oltage (V)
V D S , Drain-to-S ource Voltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
T J = 2 5 C
100
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = 27 A
I D , D r ain- to-S ourc e C urre nt (A )
2.5
TJ = 1 7 5 C
10
2.0
1.5
1
1.0
0.1
0.5
0.01 2 3 4 5 6
V DS = 2 5 V 2 0 s PU L SE W ID TH
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , G ate-to -S ource V olta ge (V )
T J , Junction T emperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLIZ34N
1400 15
V G S , G a te -to -S o u rce V o lta g e (V )
1200
V GS C iss C rs s C iss C oss
= 0 V, f = 1 MH z = C gs + C gd , Cd s SH O R TED = C gd = C ds + C gd
I D = 1 6A V D S = 44 V V D S = 28 V
12
C , C a p a cita n c e (p F )
1000
800
9
C os s
600
6
400
C rs s
200
3
0 1 10 100
A
0 0 4 8 12 16
FOR TE ST C IR CU IT SE E FIG U RE 13
20 24 28 32
A
V D S , Drain-to-Source Voltage (V )
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
I S D , R e v e rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n)
I D , D ra in C u rre n t (A )
100
100 10 s
T J = 17 5C TJ = 2 5C
10
1 00s 10 1m s
1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VG S = 0 V
1.8
A
1 1
T C = 25 C T J = 17 5C S ing le Pulse
10
10m s
A
100
2.0
V S D , S ource-to-Drain Voltage (V )
V D S , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLIZ34N
25
VDS
20
RD
VGS RG
D.U.T.
+
ID , Drain Current (A)
-VDD
15
5.0V
10
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
(Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
Thermal Response
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLIZ34N
VDS D.U.T. RG + V - DD
5.0 V
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
L
250
TOP
200
BO TTOM
ID 6 .6A 11A 16 A
IAS tp
0.01
150
100
Fig 12a. Unclamped Inductive Test Circuit
50
V(BR)DSS tp VDD VDS
0
V D D = 2 5V
25 50 75 100 125 150
A
175
Starting TJ , Junction T emperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLIZ34N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
D.U.T
+
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRLIZ34N
Package Outline
TO-220 FullPak Outline Dimensions are shown in millimeters (inches)
1 0.60 (.417) 1 0.40 (.409) o 3.40 (.133) 3.10 (.123) -A 3.70 (.145) 3.20 (.126) 7.10 (.2 80) 6.70 (.2 63) 4.80 (.189) 4.60 (.181)
2.80 (.110) 2.60 (.102) LE AD AS SIGN M EN T S 1 - GA TE 2 - D R AIN 3 - SO U RC E N OT ES : 1 D IME N SION IN G & T OLE R AN C IN G PER A NS I Y 14.5M , 1982 2 C ON T R OLLIN G D IM EN SION : IN CH .
16.00 (.630) 15.80 (.622)
1.15 (.045) M IN . 1 2 3 3.30 (.130) 3.10 (.122) -B -
13.70 (.540) 13.50 (.530) C D
3X
1.40 (.055) 1.05 (.042)
3X
0.90 (.0 35 ) 0.70 (.0 28 ) 0.25 (.010) M AM B
3X
0.48 (.019) 0.44 (.017)
A
B
2.54 (.100) 2X
2 .85 (.112) 2 .65 (.104)
M IN IM U M C RE EPA GE D IS TA NC E BET W EE N A-B-C -D = 4.80 (.189)
Part Marking Information
TO-220 FullPak
E XAM PLE : T HIS IS A N IRF I840G W ITH AS SE MBLY LOT CODE E401
A
INT ER NAT IONA L RE CTIF IER LOGO AS SE MBLY LOT COD E
PA RT NU MBE R IRF I840G
E 401 9 24 5
D ATE CODE (YYW W ) YY = YE AR W W = W E EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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